首页> 外文OA文献 >Field Emission Beam Characteristics of Single Metal Nanotip Cathodes with On-Chip Collimation Gate Electrode
【2h】

Field Emission Beam Characteristics of Single Metal Nanotip Cathodes with On-Chip Collimation Gate Electrode

机译:片上准直栅电极的单金属纳米尖端阴极的场发射束特性

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Field-emission and beam collimation characteristics of single metal nanotip devices with double-gate electrodes are studied. Applying a previously developed method to fabricate all-metal double-gate nanotip arrays with a stacked on-chip extraction G$_{ext}$ and collimation G$_{col}$ gate electrodes with the large G$_{col}$ apertures, the authors produced single double-gate nanotip devices and measured their beam characteristics. Excellent beam collimation capability with minimal reduction of the emission current and the enhancements of the current density up to a factor of ∼7 was observed. The results indicate that these single nanotip devices are highly promising for electron beam applications that require extremely high brilliance and coherence.
机译:研究了具有双栅电极的单金属纳米尖端器件的场发射和束准直特性。应用先前开发的方法制造具有堆叠式片上提取G $ _ {ext} $和准直G $ _ {col} $栅电极以及大G $ _ {col} $的全金属双栅纳米尖端阵列作者制作了单个双门纳米尖端器件,并测量了其光束特性。观察到了极好的光束准直能力,同时发射电流的减小最小,电流密度提高了约7倍。结果表明,这些单纳米尖端器件对于要求极高的亮度和相干性的电子束应用具有很高的前景。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号